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ICs for Mobile Communication
AN6096FHN
Transmission and reception IC for cellular telephone
Overview
The AN6096FHN is a transmission and reception IC for a cellular telephone. It is encapsulated in the QFN package which is very thin and very small outline by using our exclusive process method. It integrates QPSK (Quadrature phase shift keying) modulator for transmission and an IF circuit for reception in a single chip. It contributes to realization of thinner and lighter equipment by adopting a very small package and designing a low power consumption circuit.
19 20 5.200.10 (5.00) 13
3C0 .5 0
Unit: mm
24 R0.30 1 7
8
(0.77)
0.10 4.000.10 (1.10) (0.77) 1 24 7
Seating plane
(0 .1 5)
8
* Integrating an orthogonal modulation circuit for transmission and an IF circuit for reception on a single chip * Low power consumption by using an indirect modulation system in transmission block * Built-in APC circuit for transmission output adjustment * High input sensitivity by optimizing circuit in reception circuit * Built-in RSSI circuit of wide dynamic range in reception block
20 19 0.50 0.200.06
12 13 (0.44) 0.10 M
0.600.10
QFN024-P-0405A (Lead-free package)
Applications
* Cellular telephone
VCCMOD GNDOUT VCCOUT LMDEC2 LMDEC1 13
TXOUT
Block Diagram
19
18
17
16
15
LMIN
Q-IN
20
IO
IO
14
(0.44)
Features
3.000.10
(1.10)
0.80 max.
0.200.10
(4.00) 4.200.10
12
12
MXOUT
Q-IN
21
IO
11
VCCMIX
I-IN
22 RSSI
10
RXMXIN
I-IN
23
9
RXLOIN
APC/BS
24 IO
1 2 3 4 5 GNDMOD TXLO1 TXLO2 TXLO2R GNDRX 6 VCCLIM LMOUT 7
8
RSOUT
Publication date: October 2002
SDM00004BEB
1
AN6096FHN
Pin Descriptions
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 Symbol TXLO1 GNDMOD TXLO2 TXLO2R GNDRX LMOUT VCCLIM RSOUT RXLOIN RXMXIN VCCMIX MXOUT Description TX local 1-in GND TX-mod. TX local 2 TX local 2-ref. GND-RX Lim. out VCC lim. RSSI out RX local-in RX mix.-in VCC mix. Mix. out Pin No. 13 14 15 16 17 18 19 20 21 22 23 24 Symbol LMDEC1 LMDEC2 LIMIN GNDOUT TXOUT VCCOUT VCCMOD Q-IN Q-IN I-IN I-IN APC / BS Description Lim. decouple 1 Lim. decouple 2 Lim. in GND TX-out TX-output VCC TX-out VCC TX-mod. Q input Q input I input I input APC / BS
Absolute Maximum Ratings
Parameter Supply voltage Supply current Power dissipation
*2 *1
Symbol VCC ICC PD Topr Tstg
Rating 4.2 60 125 -30 to +80 -55 to +125
Unit V mA mW C C
Operating ambient temperature Storage temperature
*1
Note) *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25C. *2: The power dissipation shown is for the independent IC without a heat sink at Ta = 80C. Refer to " Application Notes".
Recommended Operating Range
Parameter Supply voltage Symbol VCC Range 2.7 to 4.0 Unit V
2
SDM00004BEB
AN6096FHN
Electrical Characteristics at Ta = 25C
Parameter Consumption current (Transmission) Sleep current *1 Output level 1
*1 *1
Symbol ICCTX
Conditions Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 2.3 V No signal, VAPC/BS = 0 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 607 MHz, -20 dBm VAPC = 2.3 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 631 MHz, -20 dBm VAPC = 2.3 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 1.0 V No signal VM1 = 60 dB, SW1 = b Filter loss: except for -5.5 dB VM1 = 105 dB, SW1 = b Filter loss: except for -5.5 dB VL1 = 15 dB VL1 = 0 dB VL1 = 115 dB VS (VIS) = VS1 + 0.12 V DS = VS (VIS + 75 dB) - V(VIS) DS1 = 5{VS (VIS + 15 dB) - VS (VIS)}/ DS DS2 = 5{VS (VIS + 30 dB) - VS (VIS + 15 dB)}/ DS DS3 = 5{VS (VIS + 45 dB) - VS (VIS + 30 dB)}/ DS DS4 = 5{VS (VIS + 60 dB) - VS (VIS + 45 dB)}/ DS DS5 = 5{VS (VIS + 75 dB) - VS (VIS + 60 dB)}/ DS
Min
Typ 25
Max 33
Unit mA
ISLTX PO1
-16
0 -13
10
A dBm
Output level 2 *1
PO2
-16
-13
dBm
Minimum output level *1
Pmin
-50
-43
dBm
Consumption current (Reception) *2 ICCRX Mix. conversion gain
*2
21 101 80
3.2 23.5 107 85 1.25 0.23 2.6 1.8 1 1 1 1 1
4.5 26 90 1.60 0.6 2.91 2.19 1.25 1.25 1.25 1.25 1.25
mA dB dB dB V[p-p] V V V
GMX VMX GLM
*2
Mix. maximum output amplitude *2 Lim. voltage gain *2 Lim. maximum output amplitude RSSI output voltage 1 RSSI output voltage 2
*2 *2 *3
VLM VS1 VS2 DS DS1 DS2 DS3 DS4 DS5
VL1 = 80 dB, 400 kHz component 0.90 0 2.31 1.39 0.75 0.75 0.75 0.75 0.75
RSSI reference output inclination RSSI output inclination variation 1 *3 RSSI output inclination variation 2 *3 RSSI output inclination variation 3 *3 RSSI output inclination variation 4 *3 RSSI output inclination variation 5 *3
Note) *1: VCC = 3.0 V, IQ signal amplitude: 0.35 V[p-p] (single phase), DC bias: 1.6 V, /4 QPSK modulation wave Output frequency of PO1: 1 429.002 5 MHz, Output frequency of PO2: 1 453.002 5 MHz, Output frequency of Pmin: 1 441.002 5 MHz Lo input level is a setting value of signal source (output impedance 50 ). *2: VCC2 = 3.0 V, SW1 = a, VLO3 = 90 dB: f = 129.6 MHz, VM1: f = 130 MHz, VL1: f = 400 kHz (input level of pin 15 excluding the attenuation by matching circuit and filter.) VMX and VLM are measured in high impedance unless otherwise specified. Lo input level is a setting value of signal source (output impedance 50 ). *3: VIS is the input level of which the RSSI output voltage becomes VS1 + 0.12 V.
SDM00004BEB
3
AN6096FHN
Electrical Characteristics at Ta = 25C (continued)
* Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. VCC1 = 3.0 V unless otherwise specified. Lo input level is a setting value of signal source (output impedance 50 ).
Parameter Carrier leak suppression amount (fLO2 - fLO1)
Symbol CL
Conditions Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 2.3 V IO: DC offset adjustment Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 2.3 V, IO: level adjustment Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 2.3 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 2.3 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 2.3 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 2.3 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 2.3 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 1.0 V to 2.3 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 1.0 V / 1.6 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 607 MHz to 1 631 MHz, -20 dBm VAPC = 2.3 V Lo1 = 178 MHz, -25 dBm Lo2 = 1 619 MHz, -20 dBm VAPC = 2.3 V
Min
Typ -35
Max
Unit dBc
Image leak suppression amount
IL
-35
dBc
Near spurious suppression amount Base band distortion suppression amount Adjacent channel leakage power suppression amount (30 kHz detuning) Adjacent channel leakage power suppression amount (50 kHz detuning) Adjacent channel leakage power suppression amount (100 kHz detuning) APC variable width
DU
-70
-65
dBc
BD
-40
dBc
BL1
-45
-38
dBc
BL2
-70
-60
dBc
BL3
-65
dBc
LAPC
30
37
dB
APC output level control sensitivity
SAPC
46
dB/V
In-band output level deviation
P
-1.5
+1.5
dB
Modulation precision
EVM
2.0
%rms
4
SDM00004BEB
AN6096FHN
Application Notes
* PD Ta curves of QFN024-P-0405A PD Ta
0.700 0.660 0.600 Mounted on the standard printed circuit board (Glass epoxy:50 x 50 x t0.8 mm3) Rth(j-a) = 151.5C/W
Power dissipation PD (W)
0.500
0.500
0.300 0.279 0.200 Independent IC without a heat sink Rth(j-a) = 357.4C/W
0.100
0 0 25 50 75 100 125
Ambient temperature Ta (C)
* Main characteristics
Note) Test conditions are the same as " Electrical Characteristics" unless otherwise specified. The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
APC control voltage characteristics
-10 -20 VCC = 3.0 V, Ta = -30C, 25C, 80C Lo1: 178 MHz -25 dBm Lo2: 1619 MHz -20 dBm I, Q: 0.35 V[p-p] PO (Single phase) 1.6 VDC , / 4 Using PN9-step continuous wave -30C 80C
Mix. characteristics
Adjacent channel leakage power suppression amount ACP 30 kHz, ACP 50 kHz (dBc) Proximity spurious suppression amount DU (dBc)
120 110 100 25C -30C 80C
0
Mix. output level (dBV)
Output level PO (dBm)
-30 -40 -50 -60 -70 -80
90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 VCC = 3.0 V Ta = -30C, 25C, 80C Mix. in: 130 kHz Mix. out: 400 kHz Lo3 in: 129.6 MHz, 90 dBV
-30 ACP 30 kHz 80C 25C -30C -30C, 25C ACP 50 kHz 80C Circuit off 25C 0 1 2 -30C DU 3 -40 -50 -60 -70 -80 -90
APC control voltage (V)
Mix. input level (dBV)
SDM00004BEB
5
AN6096FHN
Application Notes (continued)
* Main characteristics (continued)
Note) Test conditions are the same as " Electrical Characteristics" unless otherwise specified. The characteristic values below are theoretical values for designing and not guaranteed.
Proximity spurious suppression
120 110 100 25C, 80C -30C
RSSI characteristics
3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -30C 25C, 80C 20 40 60 80 100 120 VCC = 3.0 V Ta = -30C, 25C, 80C Lim. in: 400 kHz Lim. out: 400 kHz
Lim. amp. output level (dBV)
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 VCC = 3.0 V Ta = -30C, 25C, 80C Lim. in: 400 kHz Lim. out: 400 kHz
RSSI output voltage (V)
90
0
Lim. amp. input level (dBV)
Lim. amp. input level (dBV)
Application Circuit Example
PO TXOUT
100 nF MIXOUT VMX
47 400 kHz filter
VLI 2.0 k 100 nF a SW1 b
3.3 F VCC1 1 000 pF 1 000 pF 19 18 20
IO IO
17 100 pF
13 15 nF 12 100 pF 1 000 pF 47 100 pF VMI 1 000 pF Lo3
IO
Q 0.1 F Q 330 pF I 0.1 F I 330 pF 2 200 pF
21
16
14 15 nF
15
11 10
22
RSSI
23
9
24
IO
8 1 2 3 4 5 6 10 pF 7
47
VAPC/BS
Lo1
47
1.0 k
33 nF
1 000 pF 100 pF 1 000 pF VS RSSIOUT 4.7F VCC2
Matsushita Electronic Components EHF FD1623 100 pF Lo2
6
SDM00004BEB
VLM LIMOUT
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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